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Teraoka, Yuden
no journal, ,
Nano-meter scale fabrication processes via molecular beams at solid surfaces are introduced in a symposium of the Japan Applied Physics Society Spring Meeting, entitled "Prospects of excitation nano-processing". As molecular beam techniques, a supersonic molecular beam technique, an oriented molecular beam technique for polar molecules by a hexapole electric field method, an oriented molecular beam technique for non polar molecules by a speed selection method, and atomic beams with hyper-thermal energies by a laser detonation method will be reviewed. And experimental results of surface reaction researches obtained via these molecular beam techniques will be also introduced concretely. Finally, prospects for surface reaction researches via such molecular beam techniques will be mentioned.
on Si(111)-7
7 at room temperature, 1; Translational kinetic energy dependence of initial sticking probability investigated by time-resolved XPSYoshigoe, Akitaka; Naruhiro, Eisuke; Moritani, Kosuke; Teraoka, Yuden
no journal, ,
The adsorption processes of O on Si(111)-77 at room temperature is an interesting reaction system, because the metastable adsorbed oxygen species having enough observable lifetime in surface analysis measurements, such as by XPS, STM etc. even at room temperature were reported. We report the translational kinetic energy dependence up to 2.3eV of an initial sticking probability (S
) evaluated from the oxygen uptake measured by synchrotron radiation real-time XPS. All experiments were performed by using SUREAC2000 at BL23SU in SPring-8. The supersonic O beams were exposed to the Si(111)-7x7 surface at room temperature and O1s XPS spectra were measured every 15s. We found that the oxygen uptake curves in the incident energies from 0.03eV to 2.23eV were almost fitted by the second-order Langmuir equation and we evaluated the S by using that kinetic equation. Since S decreased with increasing the incident energy from 0.03eV to 0.07eV, we concluded that the trapping-mediated adsorption (TMA) is an dominant process in these energy regions. On the other hand, S abruptly increased and then it was loosely changed at more than 0.07eV region. Thus, it is deduced that the contribution of TMA became small and the direct adsorption without precursor states got to be an dominant process in these energy region.
on Si(111)-77 at room temperature, 2; Translational kinetic energy dependence of saturated oxygen coverage investigated by SR-XPSYoshigoe, Akitaka; Naruhiro, Eisuke; Moritani, Kosuke; Teraoka, Yuden
no journal, ,
The questions about the relationship between the adsorption processes and adsorption states have still remained on the adsorption dynamics for O/Si(111)-77 at room temperature because the most studies has been done by molecular beam scattering experiments. Using synchrotron radiation XPS, we investigated the saturated oxygen coverages depending on the translational kinetic energy up to O. All experiments have been performed by using SUREAC2000 at BL23SU in SPring-8. The supersonic O beams were exposed on an Si(111)-77 surface at room temperature and the O1s X-ray photoelectron spectra were monitored about every 15s until saturation coverage. Comparing saturated spectra for 0.03eV (thermal gas condition) with 2.23eV condition, we clarified that the chemical shifted component at +0.6eV assigned to the insx3-tri oxygen was clearly observed with increasing the incident energy. Since the annealing at 600K only makes this component grown, the result indicated that the translational kinetic energy essentially enhanced the dissociative adsorption states which were hardly formed at room temperature, i.e. the reaction via overcoming the potential energy barriers by incident energies might be progressive (activated adsorption).
Ogawa, Shuichi*; Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden; Mizuno, Yoshiyuki*
no journal, ,
In order to study adsorption reaction dynamics of nitrogen molecules at Ti surfaces, Ti(0001) nitridation processes via supersonic nitrogen molecular beams were observed by real-time photoelectron spectroscopy. Incident energy dependence of initial sticking probability was investigated for each adsorption state of nitrogen molecules. The N1s photoemission peak consists of two components. The incident energy dependence of initial sticking probability was obtained from adsorption uptake curves for each component. The two components revealed almost same tendency. It was indicated that dissociative adsorption via a physical adsorption state was a major process in the incident energy less than 0.3 eV, and direct adsorption took place mainly in the incident energy larger than 0.3 eV.
Uchiya, Naoyuki*; Harada, Takuya*; Nishikawa, Hiroyuki*; Haga, Junji; Sakai, Takuro; Sato, Takahiro; Ishii, Yasuyuki; Kamiya, Tomihiro
no journal, ,
no abstracts in English
beam exposuresTagawa, Masahito*; Yokota, Kumiko*; Nishizaki, Noriaki*; Miyagai, Suguru*; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
Fast nitrogen molecular beams with 2 keV kinetic energy were irradiated at an Si(001) surface with an ultra-thin oxide overlayer. Photoemission peaks of bulk Si atoms became to be not clear. This fact indicates that nitrogen molecules transmitted from the oxide film react with bulk Si atoms. On the other hand, slow nitrogen molecular beams with 1.6 eV to 6.9 eV incident energy were irradiated at the oxide film. The surfaces were observed by photoemission spectroscopy with synchrotron radiation. With increasing the incident energy, SiN-related part in the Si2p photoemission peak increased in the bulk-sensitive measurements rather than surface-sensitive measurements. This fact reveals that nitrogen molecules are impinged into the oxide film even in such low energy and chemical bonds with Si atoms are formed near the interface.
Hayakawa, Ryoma*; Nakae, Mari*; Yoshida, Shinji*; Tagawa, Masahito*; Teraoka, Yuden; Yoshimura, Takeshi*; Ashida, Atsushi*; Kunugi, Shunsuke*; Uehara, Tsuyoshi*; Fujimura, Norifumi*
no journal, ,
Chemical bonding states of silicon nitride films formed by an atmospheric plasma method and a RF plasma method were analyzed by photoemission spectroscopy with synchrotron radiation and compared each other. The SiN/Si(111) interface formed by the RF plasma method consisted of 5 components. On the other hand, the SiN/Si(111) interface formed by the atmospheric plasma method consisted of 4 components. The Si
N component is in the interface formed by the RF plasma method.
-FeSi
Zhuravlev, A.; Yamaguchi, Kenji; Shimura, Kenichiro*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi; Terai, Takayuki*
no journal, ,
no abstracts in English
-FeSi thin film prepared by IBSD methodSasase, Masato*; Shimura, Kenichiro*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
no journal, ,
no abstracts in English
Yamamoto, Hiroyuki; Oba, Hironori; Sasase, Masato*; Yamaguchi, Kenji; Shamoto, Shinichi; Yokoyama, Atsushi; Hojo, Kiichi
no journal, ,
no abstracts in English
Fujinami, Masanori*; Watanabe, Kazuya*; Oguma, Koichi*; Akahane, Takashi*; Kawasuso, Atsuo; Maekawa, Masaki; Matsukawa, Kazuto*; Harada, Hirofumi*
no journal, ,
no abstracts in English
Sasaki, Akira; Nishihara, Katsunobu*; Maehara, Hiroaki*; Sunahara, Atsushi*; Nishikawa, Takeshi*; Koike, Fumihiro*; Kagawa, Takashi*; Tanuma, Hajime*
no journal, ,
no abstracts in English
Shibata, Tokushi
no journal, ,
An estimation of the fast neutron fluence for the Hiroshima Atomic Bomb was carried out. The method is to estimate the fluence using the amount of the 
Ni contents in copper samples, neutron spectrum for the Hiroshima Atomic Bomb, and the excitation function of the Cu(n, p) Ni reaction. The extraction method of the trace amount of the Ni from copper samples was developed. The Ni was measured by a low-background liquid-scintillation counter. The excitation function of the Cu(n,p) Ni reaction was measured. The fluence was obtained from the measured Ni amount using the neutron spectrum and the excitation function of the reaction. The obtained results are consistent with the values given by the new dosimetry system D02.
Miyamoto, Haruki; Oshima, Takeshi; Imaizumi, Mitsuru*; Kibe, Koichi*; Ito, Hisayoshi; Kawano, Katsuyasu*
no journal, ,
no abstracts in English
1 surface, 2Togashi, Hideaki*; Suemitsu, Maki*; Asaoka, Hidehito; Yamazaki, Tatsuya
no journal, ,
no abstracts in English
crystalsMurakami, Go*; Abe, Kenichiro*; Ashida, Atsushi*; Wakita, Kazuki*; Watase, Seiji*; Izaki, Masanobu*; Oshima, Takeshi; Morishita, Norio; Ito, Hisayoshi
no journal, ,
no abstracts in English
Nakagawa, Satoko*; Sone, Yoshitsugu*; Tajima, Michio*; Oshima, Takeshi; Ito, Hisayoshi
no journal, ,
no abstracts in English
Asaoka, Hidehito; Yamazaki, Tatsuya; Shamoto, Shinichi
no journal, ,
no abstracts in English
Saeki, Morihisa; Oba, Hironori; Yamamoto, Hiroyuki; Yokoyama, Atsushi
no journal, ,
no abstracts in English
Onoda, Shinobu; Hirao, Toshio; Mishima, Kenta; Kawano, Katsuyasu*; Ito, Hisayoshi
no journal, ,
no abstracts in English